| 摘要 |
A metallic film (2) of a metal on which an electroless plating film can be deposited is formed on part of the surface of a thermoelectric semiconductor (8), an object to be plated, made of a material which cannot be directly plated electrollessly. The thermoelectric semiconductor (8) is dipped in an electroless plating bath to form a uniform conductive film (3), i.e., an electroless plating film on the whole surface of the thermoelectric semiconductor (8), including the surface of the metallic film (2).
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