| 摘要 |
PURPOSE:To obtain second harmonic waves without using a high-accuracy optical system for coupling by forming an excitation light source consisting of a semiconductor laser element and a nonlinear optical waveguide consisting of a compd. semiconductor on the same crystal substrate. CONSTITUTION:The semiconductor laser element 1 and the nonlinear optical waveguide 2 consisting of ZnSxSe1-x are formed by an org. metal vapor growth method or crystal growth method, such as molecular beam epitaxy, on a GaAs substrate 4. The semiconductor laser element 1 is constituted by successively laminating an n-GaAs buffer layer, n-InGaP clad layer, non-doped GaAs light confining layer, In0.2Ga0.8As strain quantum well active layer, non-doped GaS light confining layer, p-InGaP layer, GaAs etching stop layer, p-InGap clad layer, and g'-GaAs contact layer on an n type GaAs substrate. The structure of the semiconductor laser and the nonlinear optical waveguide is formed by process, such as photolithography or etching. The direct coupling of the semiconductor laser beam with the nonlinear optical waveguide is possible in this way. |
