| 摘要 |
<p>A nonvolatile memory device and its method of fabrication is described. The electrically erasable nonvolatile memory device of the present invention includes a tunnel dielectric formed on a p-type substrate region. A floating-gate having a work function of greater than 4.1 eV is formed on the tunnel dielectric layer. A dielectric is then formed on the floating-gate. a control gate is then formed on the dielectric over the floating-gate.</p> |
