DYNAMIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A dynamic random access memory(DRAM) is provided to form a broader and shallower trench capacitor in the same device region as in a conventional technology, by using a transistor region as a trench capacitor region. CONSTITUTION: The first silicon substrate(100), the second silicon substrate and an insulating layer intervening between the first and second silicon substrates are prepared. A plurality of trench capacitors are formed on the first silicon substrate. Transistors corresponding to the respective trench capacitors are formed on the second silicon substrate. The respective corresponding trench capacitors and transistors penetrate the insulating layer and are electrically interconnected.