发明名称 |
A METHOD FOR CLEANING AND TREATING A SEMICONDUCTOR WAFER AFTER CHEMICAL MECHANICAL POLISHING |
摘要 |
A method is provided for cleaning a surface of a semiconductor wafer after a CMP operation. In one example, an improved cleaning chemical (ICC) is applied to the surface of the wafer. The ICC is configured to transform a copper film on the surface of the wafer into a water soluble form. The wafer surface is scrubbed. The wafer is then rinsed with a liquid. The scrubbing and the rinsing are configured to remove a controlled amount of the water soluble copper from the surface of the wafer and the brush, wherein the applying, the scrubbing, and the rinsing are performed in a brush box.
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申请公布号 |
WO0124234(A2) |
申请公布日期 |
2001.04.05 |
申请号 |
WO2000US27139 |
申请日期 |
2000.09.28 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
MIKHAYLICH, KATRINA, A.;RAVKIN, MIKE |
分类号 |
C11D7/06;C09K13/08;C11D7/18;C11D7/26;C11D7/32;C11D7/60;C11D17/08;H01L21/02;H01L21/304;H01L21/321;(IPC1-7):H01L21/00 |
主分类号 |
C11D7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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