MAGNETORESISTANCE EFFECT MEMORY DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

A magnetoresistance effect memory device comprising a first ferromagnetic film, a second ferromagnetic film, a first nonmagnetic film formed between the first and second ferromagnetic films, a first conductive film adapted to produce a magnetic field for reversing the magnetization of at least one of the first and second ferromagnetic films and not in electrical contact with the films, and second and third conductive films for applying current to the first and second ferromagnetic films and the first nonmagnetic film, wherein the characteristics of reverse of the magnetization of the first ferromagnetic film with respect to a magnetic filmed are different from these of the second one, and the first nonmagnetic film contains at least a nitride.