| 摘要 |
PURPOSE: A charge coupled device and a fabrication method thereof are to form a photodiode region of an hourglass-shaped drum type, thereby preventing the smear phenomenon and, at the same time, improving the sensitivity. CONSTITUTION: The second conductive type well area(22) is formed on the first conductive type semiconductor substrate(21). Pluralities of vertical charge transmitting areas are formed in a desired area of a surface of the well area at regular intervals. The first photodiode area(25) is formed in the well area between the vertical charge transmitting areas. The second photodiode area(27) is formed on the first photodiode area to have a larger surface area than the first photodiode area. The third photodiode area(30) is formed on the second photodiode area corresponding to the first photodiode. A channel stop area(28) is formed at the well area between each photodiode area and the vertical charge transmitting area. Pluralities of poly gates are formed on the vertical charge transmitting area interposing a gate insulating film(31) therebetween. The channel stop area is overlapped with a side of the third photodiode area, the second photodiode area, while being lower than the second photodiode area.
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