| 摘要 |
PURPOSE: A polishing head of chemical mechanical polishing(CMP) equipment is provided to improve uniformity in performing a polishing process regarding a front surface of a wafer, by uniformly applying back pressure to the wafer during a CMP process. CONSTITUTION: The first flange(31) includes a peripheral hole(37) for gas flow and an intermediate hole(45) for gas flow in a peripheral part and an intermediate part which have different diameters. The second flange(33) shares a central axis with the first flange, having a diameter smaller than the distance from the central axis to the peripheral hole and having a connection hole(47) connected to the intermediate hole in an assembled state. A head part(35) is composed of three planes of a peripheral part, an intermediate part and a central part which are located under the center, sharing the central axis with the first flange. The peripheral part has a distance farther than the distance from the central axis to the peripheral hole. The intermediate part has a distance farther than the distance from the central axis to the intermediate hole, having a plurality of holes which are radially symmetrical in a position farther than the periphery of the second flange of the central axis. The central part constitutes a bottom of a space connected through a hole formed in the second flange, having at least one radially symmetrical hole.
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