| 摘要 |
<p>A light-emitting device comprising an emission layer which has a single layer structure is formed. The emission layer is sandwiched by a first quantum-wave interference layer constituted by plural periods of a pair of a first layer and a second layer, the second layer having a wider band gap than the first layer, and a second quantum-wave interference layer constituted by plural periods of a pair of a third layer and a fourth layer, the fourth layer having a wider band gap than the third layer. The first quantum-wave interference layer functions as an electron reflection layer, and its thickness is determined by multiplying by an odd number one fourth of quantum-wave wavelength of the injected electrons. The second quantum-wave interference layer functions as an electron transmission layer, and its thickness is determined by multiplying by an odd number one fourth of quantum-wave wavelength of the injected electrons. As a result, luminous efficiency of the device is improved. A barrier layer is formed at each interfaces between the first quantum-wave interference layer, the emission layer, and the second quantum-wave interference layer. As a result, generation of electron-hole pairs is improved. <IMAGE></p> |
