| 发明名称 |
GROWTH OF GAN ON SAPPHIRE WITH MSE GROWN BUFFER LAYER |
| 摘要 |
A method of fabricating a gallium nitride or like epilayer on sapphire is disclosed wherein a buffer layer is grown on the sapphire substrate by magnetron sputter epita xy (MSE); and then the gallium nitride epilayer is formed on the buffer layer, preferably by molecular beam epitaxy.
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| 申请公布号 |
CA2284475(A1) |
申请公布日期 |
2001.04.04 |
| 申请号 |
CA19992284475 |
申请日期 |
1999.10.04 |
| 申请人 |
NATIONAL RESEARCH COUNCIL OF CANADA |
发明人 |
TANG, HAIPENG;WEBB, JAMES BRIAN |
| 分类号 |
C30B23/02;(IPC1-7):C30B29/38 |
主分类号 |
C30B23/02 |
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