| 摘要 |
<p>By forming a silicon single-crystal thin film direct on a chemically etched substrate, a time required for all the process can be effectively shortened, which largely contributes to reduction in production cost of a silicon epitaxial wafer and improvement on production efficiency thereof, with the result that a reduced wafer price at a user's end and a short delivery time are ensured. In a technical aspect, an etching removal in a chemical etching treatment is set to be 60 mu m or more and thereby, a glossiness of a front main surface of a chemically etched substrate can be ensured to be 95 % or higher. With such a glossiness of the front main surface of the substrate employed, a surface glossiness of a silicon single-crystal thin film formed on the front main surface of the chemically etched substrate can be increased to 95 % or higher, thereby, enabling an auto-alignment treatment in a lithographic step coming later with no trouble. <IMAGE></p> |
