发明名称 POST-PROGRAM METHOD FOR FLASH MEMORY DEVICE
摘要 PURPOSE: A post-program method for a flash memory device is provided to reduce a post-program execution time by performing a post-program so as to select at least two bit lines, and improves an entire performance of a chip. CONSTITUTION: A pre-post program is sequentially performed (302) for a pre-post program time about all bit lines after resetting a bit line address counter. A bit line address counter is reset again, and it is checked that a post-program is successful or not about one bit line. If the post-program is successful, the post-program verification is repeated until a post-program is succeeded. If the post-program is not successful, many line lines are selected and a main post program is performed during a main post program execution time. If the main post program is successful, the main post program verification is repeated until a post program is successful to all bit lines. If the post-program is not successful, an erasing action is failed and terminated.
申请公布号 KR100293635(B1) 申请公布日期 2001.04.04
申请号 KR19980010534 申请日期 1998.03.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JAE GWAN
分类号 G11C16/00;(IPC1-7):G11C16/00 主分类号 G11C16/00
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