| 摘要 |
A pattern to be transferred onto a predetermined area on a beam-sensitive substrate is divided into a plurality of small regions on a mask, projection of a charged particle beam covering each small region is repeated for all of the small regions, and pattern transfer positions are adjusted so that transfer areas corresponding to the small regions are contacted with each other on the beam-sensitive substrate. When the pattern to be transferred to the predetermined area on the beam-sensitive substrate is divided into the plurality of small regions, the small regions having the same pattern portion after division are represented by a common small region, and, upon transferring, the pattern of the common small region is transferred onto a plurality of positions on the beam-sensitive substrate. <IMAGE> |
