| 摘要 |
<p>The object of the present invention is to provide a power, field-effect semiconductor device, in which the concentration of electric fields generated at a corner part is relieved even if the integration degree of the device is improved. <??>The semiconductor device has an N well (2) formed on a p-type substrate (1), and a drain region (8) disposed in the N well (2). A P base (3) surrounds the N well (2), and the P base (3) and the drain (8) have straight portions separated by an uniform interval. A corner part is formed at an end portion of the straight portions. At the corner part of the drain (8), the interval between the P base (3) and the drain (8) is larger than the interval between the straight portions, and the conductivity characteristics in the larger interval region are different from those of the N well (2) along a predetermined width W1 in order to relieve the concentration of electric fields at the corner part. <IMAGE></p> |
