| 摘要 |
PURPOSE: A flash EEPROM cell, a manufacturing method thereof, and programming, erasing and reading method using the same are provided to enhance an integration degree by using a polysilicon spacer as a gate. CONSTITUTION: A select gate oxide layer(12), a polysilicon layer for a select gate(13) and a first dielectric layer(14) are formed on a substrate(11) sequentially. A dielectric layer spacer(15) is formed on a sidewall of a select gate. After forming a tunnel oxide layer(16) on an exposed portion of the substrate, a polysilicon layer for a floating gate is deposited on the resultant structure, and a polysilicon spacer(17) is formed on both side of the select gate by an etching process. Drain and source regions(18,19) are formed on the substrate by performing an ion implanting process using a self-aligned method. After forming a second dielectric layer and a polysilicon layer for a control gate on the resultant structure, a first and a second floating gate(17a,17b) and a first and a second control gate(21a,21b) are formed simultaneously.
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