发明名称 |
High voltage transistor |
摘要 |
In a method for constructing a semiconducting device, within a substrate of a first conductivity type there is formed a well of second conductivity type. Within the well, an extended drain region of a first conductivity type is formed. An insulating region over the extended drain region is formed. A gate region is formed on a surface of the substrate. A first side of the gate region is adjacent to a first end of the extended drain region. A drain region of the first conductivity type is formed. The drain region is in contact with a second end of the extended drain region. A source region is formed on a second side of the gate region.
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申请公布号 |
US5274259(A) |
申请公布日期 |
1993.12.28 |
申请号 |
US19930012045 |
申请日期 |
1993.02.01 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
GRABOWSKI, WAYNE B.;RUMENNIK, VLADIMIR |
分类号 |
H01L27/098;H01L29/06;H01L29/08;H01L29/10;H01L29/40;H01L29/78;(IPC1-7):H01L29/68;H01L27/01 |
主分类号 |
H01L27/098 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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