| 摘要 |
A process for forming a shallow source/drain region, for a sub-micron MOSFET device, has been developed. The process features a process sequence comprised of a series of ion implantation procedures, followed by a low temperature, rapid thermal anneal procedure. Each ion implantation procedure, uses a specific energy and a specific dose, resulting in a series of ion implant regions, each located at a specific depth in the semiconductor substrate. A rapid thermal anneal is used to activate the implanted ions, forming the shallow source/drain region. The creation of several ion implant regions, reduced the risk of crystal damage which can result with the use of a single, more concentrated, ion implant region. The risk of crystal damage is also reduced via the use of a rapid thermal anneal procedure, which can be employed at lower temperatures than counterpart anneal procedures, that are used to distribute ions from a single, ion implanted region.
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