| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad, wherein a layer to be in direct contact with a polished surface of a wafer has a plurality of independent hollows, a uniform pressure over the whole wafer surface is given, high polishing accuracy for the wafer surface is assured, abrasive grains of sufficient density is kept, a high surface porous density and improved efficiency of polishing speed are obtained, reduction of time required for dressing and reduction of dressing frequency are attained, and there is no neccessity of providing a cushion layer on a rear surface suitable for the polishing pad requiring high flat accuracy of thickness and shape. SOLUTION: This is a polishing pad made of synthetic resin whose Shore hardness is not less than 50, compression ratio is 1.3-5.5% and compression recovery rate is not less than 50%. |
