发明名称 |
Method for fabricating a metal-oxide semiconductor transistor |
摘要 |
A method for fabricating a metal-oxide semiconductor (MOS) transistor. A substrate having a gate structure is provided. The method of the invention includes forming a liner spacer on each side of the gate structure and a low dopant density region deep inside the substrate. The low dopant density region has a lower dopant density than that of a lightly doped region of the MOS transistor. Then a interchangeable source/drain region with a lightly doped drain (LDD) structure and an anti-punch-through region is formed on each side of the gate structure in the low dopant density region. The depth of the interchangeable source/drain region is not necessary to be shallow.
|
申请公布号 |
US6211023(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US19980191202 |
申请日期 |
1998.11.12 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YEH WEN-KUAN;CHOU JIH-WEN |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01C21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|