| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of increasing the reproducibility and uniformity of a film deposition process. SOLUTION: This system is provided with a film deposition unit in which reactive gas is introduced, a heater for heating a substrate under its holding in the film deposition unit, an electrode arranged oppositely to the substrate held in the heater unit, a high-frequency power source feeding high-frequency to the electrode for generating plasma between the electrode and the substrate and a low resistance member for reducing impedance from the heater unit in the process of generating plasma to the film deposition unit. |
