Mask repattern process,申请号US19990464988-传众专利搜索

发明名称	Mask repattern process
摘要	The present invention relates to an improve method for forming a UBM pad and solder bump connection for a flip chip which eliminates at least two mask steps required in standard UBM pad forming processes when repatterning the bond pad locations.
申请公布号	US6211052(B1)	申请公布日期	2001.04.03
申请号	US19990464988	申请日期	1999.12.16
申请人	MICRON TECHNOLOGY, INC.	发明人	FARNWORTH WARREN M.
分类号	H01L21/60;H01L23/485;(IPC1-7):H01L21/44	主分类号	H01L21/60
代理机构		代理人
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