| 摘要 |
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.
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