发明名称 |
Wet oxidation method for forming silicon oxide dielectric layer |
摘要 |
A method for forming a silicon oxide gate oxide dielectric layer upon a silicon semiconductor substrate employed within a microelectronics fabrication. There is provided a silicon semiconductor substrate. There is then formed upon the silicon semiconductor substrate, empolying thermal annealing of the silicon semiconductor substrate at an elevated temperature in a gas mixture of oxygen, hydrogen and a diluent gas, a silicon oxide gate oxide dielectric layer with enhanced dielectric properties and more precise control of the silicon oxide dielectric layer thickness.
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申请公布号 |
US6211098(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US19990252337 |
申请日期 |
1999.02.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TWU JIH-CHURNG;JANG SYUN-MING;YU CHEN-HUA |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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