Method for fabricating CMOS device

摘要

A method for fabricating a CMOS device on a SOI, comprising the steps of: providing a SOI wafer having a stack structure of a base substrate, a buried oxide layer and a semiconductor layer; forming a field oxide film in the semiconductor layer to define an active region in which a PMOS device and a NMOS device are to be formed in the semiconductor layer of the SOI wafer, wherein the field oxide film is formed by performing thermal oxidation process so as to apply a compressive stress to the semiconductor layer that the PMOS device is to be formed; and forming the PMOS device and NMOS device in the active region defined by the field oxide film.