发明名称 Preventing data corruption in a memory device using a modified memory cell conditioning methodology
摘要 An embodiment of the invention is directed to a method of operating a flash memory, which includes discharging at least one local wordline of an unselected block of flash memory cells during an interval in which a selected set of flash memory cells are being conditioned, such that the at least one local wordline does not develop a charge that is sufficient to corrupt the data stored in the unselected block.
申请公布号 US6212099(B1) 申请公布日期 2001.04.03
申请号 US19990378306 申请日期 1999.08.20
申请人 INTEL CORPORATION 发明人 ZHANG SUIBIN;ANNAVAJJHALA RAVI;BALTAR ROBERT L.;WONG DOW-PING D.;LANDGRAF MARC E.
分类号 G11C16/08;G11C16/34;(IPC1-7):G11C16/04 主分类号 G11C16/08
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