发明名称 |
Preventing data corruption in a memory device using a modified memory cell conditioning methodology |
摘要 |
An embodiment of the invention is directed to a method of operating a flash memory, which includes discharging at least one local wordline of an unselected block of flash memory cells during an interval in which a selected set of flash memory cells are being conditioned, such that the at least one local wordline does not develop a charge that is sufficient to corrupt the data stored in the unselected block.
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申请公布号 |
US6212099(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US19990378306 |
申请日期 |
1999.08.20 |
申请人 |
INTEL CORPORATION |
发明人 |
ZHANG SUIBIN;ANNAVAJJHALA RAVI;BALTAR ROBERT L.;WONG DOW-PING D.;LANDGRAF MARC E. |
分类号 |
G11C16/08;G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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