发明名称 |
Method of fabricating an ETOX flash memory |
摘要 |
A method of fabricating an ETOX flash memory. A low-resistance source line is formed on the substrate to string each source region in one source array by self-aligned process to substitute conventional buried source line. And at the same time, landing pads are formed on the each drain region by a self-aligned process to reduce the fabrication difficulty of the contact plug.
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申请公布号 |
US6211012(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US20000498330 |
申请日期 |
2000.02.04 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LEE ROBIN;HONG GARY;CHEN HWI-HUANG |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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