| 摘要 |
PURPOSE: A laser diode is provided to be capable of preventing breakdown of a cleavage surface when the laser diode performs a high output operation. CONSTITUTION: An n-type GaAs buffer layer(12) is formed on an n-type GaAs substrate(11), and an n-type AlGaInP mesa layer(14) is selectively formed on an exposed buffer layer(12). An n-type AlGaInP clad layer(15), an active layer(16), a p-type AlGaInP clad layer(17), and a p-type GaAs contact layer(18) are sequentially formed on an entire surface of the mesa layer(14). A p-type electrode(19) is formed on the p-type GaAs contact layer(18), and an n-type electrode(20) is formed on a lower part of the n-type GaAs substrate(11).
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