SEMI-INSULATING GaAs SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semi-insulating GaAs single crystal substrate having both of high specific resistance and high activation rate. SOLUTION: The semi-insulating GaAs single crystal substrate contains carbon in an concentration of >=2×1015/ cm3, boron in an concentration of <=1×1016/cm3 and EL2 in an concentration of >=2×1016/ cm3.