| 摘要 |
PROBLEM TO BE SOLVED: To provide film deposition by using a thin film deposition device capable of reducing the time required for self-cleaning and capable of improving the productivity, to provide a self-cleaning method and to provide a thin film deposition device. SOLUTION: Before the deposition of a desired first film on a member to be film-deposited, the outer face of a member other than the member to be film-deposited and the inner face of the reaction chamber are deposited with second films having an etching rate higher than that of the first film, and after that, the member to be film-deposited is arranged at the inside of the reaction chamber to deposit the first film. Then, the member to be film-deposited is deposited with the first film which is carried out from the reaction chamber, thereafter, gas or radicals having etching properties are introduced into the reaction chamber, the second films and first film deposited in layers at the outer face of the member other than the member to be film-deposited and the inner face of the reaction chamber are removed by etching, and self-cleaning is executed.
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