发明名称 |
Method of reducing salicide lateral growth |
摘要 |
A method for reducing salicide lateral growth. A substrate having a gate structure and an anti-reflection layer on the gate structure is provided. A spacer is formed on the side wall of the gate structure and the anti-reflection layer. Then, the anti-reflection layer is removed to expose the gate structure; wherein the gate structure and the spacers together form a recess structure. A salicide layer is formed on the gate structure in the recess structure and on the substrate.
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申请公布号 |
US6211048(B1) |
申请公布日期 |
2001.04.03 |
申请号 |
US19990241792 |
申请日期 |
1999.02.01 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HWANG TSING-FONG;HUNG TSUNG-YUAN |
分类号 |
H01L21/336;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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