发明名称 Method of reducing salicide lateral growth
摘要 A method for reducing salicide lateral growth. A substrate having a gate structure and an anti-reflection layer on the gate structure is provided. A spacer is formed on the side wall of the gate structure and the anti-reflection layer. Then, the anti-reflection layer is removed to expose the gate structure; wherein the gate structure and the spacers together form a recess structure. A salicide layer is formed on the gate structure in the recess structure and on the substrate.
申请公布号 US6211048(B1) 申请公布日期 2001.04.03
申请号 US19990241792 申请日期 1999.02.01
申请人 UNITED MICROELECTRONICS CORP. 发明人 HWANG TSING-FONG;HUNG TSUNG-YUAN
分类号 H01L21/336;(IPC1-7):H01L21/320;H01L21/476 主分类号 H01L21/336
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