| 摘要 |
PROBLEM TO BE SOLVED: To smoothly execute the carrying of a wafer, also to execute film deposition in such a manner that the wafer is fixed to a height optimum for the film deposition and moreover to prevent the generation of dust in the film deposition environment. SOLUTION: To a plasma CVD device having a chamber 4 in which plasma is generated, a magnet part 17 surrounding the chamber 4 and generating the horizontal magnetic field on the face of a wafer 1 to be film-deposited, a carry-in port 12 and a carry-in path 18 carrying the wafer to the inside of the chamber 4 and a holder 11 located in the chamber 4 and fixing the wafer carried in from the carry-in port 12, the holder 11 is fixed at a prescribed height, moreover, the carry-in port 12 is formed in accordance with the height of the holder 11, and also, the carry-in path 18 is formed on the magnet part 17 in accordance with the position of the carry-in port 12.
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