Method for forming contact of semiconductor device

摘要

A method comprises the steps of forming a stack structure of a gate insulation film, a conductor layer for a gate electrode and a mask insulation film on both a cell part and on a peripheral circuit part of a semiconductor substrate; forming a gate stack structure by patterning the stack structure; forming a stack structure of first and second spacer insulation films on an entire upper surface of the gate stack structure; forming a spacer in which the first and second spacer insulation films are stacked one upon the other on a side wall of the gate stack structure, by anisotrophically etching portions of the stack structure of the first spacer insulation film and the second spacer insulation film of the peripheral circuit part, using a cell part mask which reveals the peripheral circuit part; forming an interlayer insulation film for flattening an entire upper surface of a resultant structure; and implementing a self-aligning contact process for revealing the cell part of the semiconductor substrate.