Method of preparing CU interconnect lines

摘要

A method for forming a Wolfram plug within a dual Damascene structure that can make copper interconnect at the first level metal thereby providing a first level metal copper contact. The method of the present invention eliminates Prior Art problems experienced in forming metal contacts for narrow and deep dual Damascene structures and allows the simultaneous formation of metal contacts for shallow and deep contact holes within dual Damascene structures. At the bottom of the conventional trench and hole of the Damascene structure, a wolfram film is selectively grown on the silicide. Barriers are formed on top of the wolfram and on the uncovered sides of the hole after which copper is deposited in the remainder of the hole. The top surface of the structure obtained in this manner is planarized using copper CVD technology.