| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing an epitaxial wafer, in which a particular device such as a oxidation furnace directly connected to an epitaxially growing reactor is not used and a particular treatment for cleaning or oxidizing the surface after epitaxially growing is not needed, thereby the production process is made simple, and by which an epitaxial wafer good in surface smoothness is produced. SOLUTION: When a wafer is taken out from an epitaxial reactor and taken into a carrying part, an oxide thin film having a thickness of <=1 nm is formed by introducing a small amount of oxygen into the inert gas in a carrying chamber and taking the wafer into the carrying chamber at >=600 deg.C immediately after forming an epitaxial film.
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