发明名称 HIGH VOLTAGE GENERATION CIRCUIT
摘要 PURPOSE: A high voltage generation circuit is provided to limit an operation of a pump circuit by limiting an output voltage of a charge pump, and thus reduces a power consumption. CONSTITUTION: A charge pump(10) performs a boosting operation by using first and second pump control signals(CLKX,CLKY) as a synchronous signal. A first level detector(20) is driven by an external signal(EN1), and outputs a first output signal(VREG1) by a resistance ratio. A first pump controller(30) receives a first output signal of the first level detector, a reference voltage(VREF), and an external first clock signal, and outputs a first pump control signal(CLKX). A second level detector(40) outputs a second output signal(VREG2) by using a first pump control signal(CLKX) of the first pump controller(30) as an enable signal(EN2). A second pump controller(50) receives a second output signal(VREG2) of the second level detector(40), a reference voltage(VREF), and a second clock signal(OSC) having an opposite phase of the first clock signal, and outputs a second pump control signal(CLKY).
申请公布号 KR100293449(B1) 申请公布日期 2001.04.03
申请号 KR19980015950 申请日期 1998.05.04
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 KIM, YONG HWAN
分类号 G11C16/06;G05F1/56;H02M3/07;H03F3/70;(IPC1-7):G11C5/14 主分类号 G11C16/06
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