PRESSURE SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A pressure sensor and a method for fabricating the same are provided to design accurately a pressure sensor by changing a fabricating process. CONSTITUTION: A single crystalline silicon epitaxial layer(102) is formed on a front face of a silicon wafer(100). A dopant implantation region as the first resistance terminal(104a) is formed by implanting dopant ions into a resistance terminal formation portion. An oxide layer(106) is formed on the single crystalline silicon epitaxial layer(102). The oxide layer(106) has a laminated structure of a thermal oxide layer(106a) and a CVD oxide layer(106b). A photoresist layer pattern is formed on an edge portion of a back face of the wafer(100). A groove portion is formed by performing an etch process. The photoresist layer pattern is removed. A polysilicon layer(110) is formed on the oxide layer(106). A dopant implantation region as the second resistance terminal(104b) is formed by implanting selectively dopant ions into the polysilicon layer(110).