| 摘要 |
PURPOSE: A field emission cathode structure and its manufacturing method are provided to enhance electron emission characteristic and increase life time of a silicon tip by increasing surface area of the silicon tip. CONSTITUTION: A field emission cathode structure comprises a substrate(21), a cathode layer(35) on the substrate, an insulating layer(36) on the cathode layer(35), and a gate electrode layer(37) on the insulating layer(36). The gate electrode layer(37) has via-hole(37a). A silicon tip(20) is allocated on the via-hole(37a). The top of the silicon tip(20) is formed as a crater so that the surface area of the silicon tip becomes much broader. I. e., the top center of the silicon tip(20) is a recess(20a) and the boundary of the recess(20a) is electrons. The silicon tip(20) is made of silicon or metal as integrated with the substrate(21).
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