发明名称 Evaluation apparatus and fabrication system for semiconductor
摘要 The present invention comprises a SCM measuring apparatus and a control section. A control section adjusts shape data of a probe tip initially inputted based on SCM measurement for a standard specimen and a simulated result by the measuring apparatus, and then performs the SCM measurement by a standard specimen, and then on the basis of the measuring result, a impurity distribution is assumed. Next, the impurity distribution is adjusted so that the CV property calculated by the SCM simulation coincides with the CV property measured by the SCM measuring apparatus, and then the CV property is calculated again. The impurity distribution in case both of the CV properties coincide with each other is determined as a definitive impurity distribution. The definitive impurity distribution is outputted to a display apparatus, a printer, and so on. Therefore, it is possible to analyze the impurity distribution with accuracy smaller than a width of the probe tip.
申请公布号 US6211686(B1) 申请公布日期 2001.04.03
申请号 US19980126133 申请日期 1998.07.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUZAWA KAZUYA;OOWAKI YUKIHITO
分类号 G01Q30/06;G01Q60/24;G01Q60/46;H01L21/66;(IPC1-7):G01R31/26;G01R31/02;G01N23/00 主分类号 G01Q30/06
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