摘要 |
This invention relates to a copolymer for the manufacture of chemical amplified photoresist and a chemical amplified positive photoresist composition comprising a copolymer for the manufacture of chemical amplified photoresist as a base resin, as represented by the following formula 1, an acid generator and additive,Wherein, R1, R2, R3 and R4 are independently a hydrogen atom or a lower alkyl group;R5, R6, R7 and R8 are a hydrogen atom, an alkyl group of C1-8, an alkoxy group, an alkoxycarbonyl group or a halogen atom;h and i are independently an integer of 0-8; k, l, m and n represent an integer of element units provided that 0.3<k/(k+l+m+n)<0.9, 0<=l/(k+l+m+n)<0.6, 0<=m/(k+l+m+n)<0.6, and 0.01<n/(k+l+m+n)<0.3, including k+l+m+n=1 and m may not become simultaneously zero, or are not simultaneously zero,R9 is a compound represented by the following formula 2:Formula 2Wherein, R10 and R11 are independently a hydrogen atom, or an alkyl group of C1~6 with linear or branched chain;R12 is an alkyl group of C1~10 with linear, branched chain or cyclic form and hence, the detailed examples of alkyl group in linear or branched chain or cyclic form include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, t-butyl group, while a cyclic alkyl group is cyclohyexyl group.The detailed examples of acid-labile group represented by the above formula 2 include methoxyethyl group, ethoxyethyl group, n-butoxyethyl group, cyclohexyl group or methoxypropyl group.Am is -NR13R14 (wherein, R13 and R14 are independently a hydrogen atom, an alkyl group of C18, an aryl group or a phenyl group), cyclic bivalent amines and a cyclic bivalent amines containing oxygen or sulfur atom.Since the resins represented by the above formula 1 has different activation energy for deprotection each other, a photoresist composition containing such resins exhibits a higher resolution without being adversely affected by exposure to radiation or baking temperature after exposed. Further, the photoresist of this invention can demonstrate a variety of excellent physical properties such as sensitivity, resolution, heat-resistance and stability after exposure, and is capable of forming ultrafine patterns irrespective of any substrate.
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