| 摘要 |
A semiconductor device is manufactured in accordance with the following steps. A prospective lower interconnection layer is formed on a substrate, and is patterned to form a lower interconnection. A first nitride film is formed on the entire surface. A first interlevel insulating film is formed on the entire surface of the first nitride film. A prospective upper interconnection layer is formed on the first interlevel insulating film, and is patterned to form an upper interconnection. A second nitride film is formed on the entire surface. The second nitride film is removed by patterning where a contact reaching the lower interconnection is to be formed. A second interlevel insulating film is formed on the entire surface. A plurality of contact holes are formed simultaneously to have different depths and reach the first and second nitride films respectively formed on the lower and upper interconnections. The first and second nitride films located at bottoms of the contact holes are etched simultaneously to form a plurality of contact holes which have different depths and reach the lower and upper interconnections, simultaneously.
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