| 摘要 |
PROBLEM TO BE SOLVED: To suppress a substrate rear surface from being contaminated in an atmosphere at film forming by exhausting an inert gas introduced onto the rear side of substrate by an exhausting mechanism different from for the atmosphere containing the material gas supplied to the front side. SOLUTION: A substrate 1 is set on a substrate support part 2. A depletion 9 provided between the substrate support part 2 and the substrate 1 is separated from a film-forming atmosphere on the front side of substrate 1 by the substrate 1. The substrate support part 2 is provided with an inert gas discharge opening 11 connected to the outside of film-forming chamber as well as an inert gas inlet 8, so that the inert gas in the depletion 9 between the rear side of substrate 1 and the substrate support part 2 is exhausted outside the film-formation chamber. By adjusting either the flow rate of inert gas supplied to the inert gas inlet 8 or the exhausting speed from the inert gas discharge opening 11, or both of them, the pressure in the space between the substrate support part 2 and the rear side of substrate 1 is controlled independently from the inside of the film-forming chamber.
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