| 摘要 |
The title method comprises (A) forming opposite gates confined within active region and field region on a substrate(1), (B) forming a bit line contact between the gates, (C) oxidizing the exposed portion of polysilicon(4) of the gate, (D) forming an oxide film side wall(8) on the side of the bit line contact, and (E) conventional capacitor and metal processing. In the oxidation of the exposed polysilicon(4), the oxide of the flat plate and side of the polysilicon is different from the oxide of the silicon substrate.
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