| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for inspecting a semiconductor, that can measure and evaluate micro roughness, crystal defects, and surface foreign objects by separating influences given by each to the others in the method for measuring either of the micro roughness, crystal defects, and surface foreign objects near the crystal surface. SOLUTION: Time change of the scattered light intensity of scattered lights 10 and 26 from a sample wafer 1 which is generated by scanning the traveling sample wafer 1 with illumination beams 8 and 9 with two wavelengths 8 includes a haze (DC component) due to the micro roughness of a sample wafer and high-density internal defects and surface foreign objects existing in the sample, and pulse scatted light (AC component) generated by the crystal defects ad surface foreign objects. Therefore, by applying illumination beams having two wavelengths onto the crystal sample, the haze for each wavelength can be detected in two different detection directions, thus measuring the micro roughness of interfaces with different depths near the crystal surface and performing haze measurement, where the influences of the micro roughness, high-density internal defects, or surface foreign objects causing the haze to occur are separated.
|
