| 摘要 |
PROBLEM TO BE SOLVED: To reduce the expansion of a mesa, by forming a second semiconductor layer on the region wherein a first semiconductor layer has been etched selectively, and by applying successively a second etching to one portion of the so etched layer as to form the outer diameter of the mesa. SOLUTION: To perform the etching for inclining the side surface of a semiconductor device, oxides or photoresist masks are formed successively on the structure comprising semiconductor layers 16-19. In these cases, the unprotected portions of the semiconductor layers 16-19 by the masks are etched. Further, to prevent the expansion of a mesa from occurring as its configuration, a semiconductor layer 21 is formed on the region etched in its preceding process. According to the manufacturing method of the semiconductor mesa device having this constitution, the expansion of the mesa can be reduced or eliminated. |
