ELECTRODE STRUCTURE OF N-TYPE COMPOUND SEMICONDUCTOR, ITS MANUFACTURING METHOD, AND COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain ohmic connection by providing an electrode with Al films formed scatteredly on a cleaned compound semiconductor substrate, on which a Ti film is provided so that the film is laid over the Al films. SOLUTION: Gas etching is performed on the surface of a ZnSe substrate 1 by using halogen gas and halogen compound. In the case of HCl gas, a treatment chamber heats the sample in a HCl gas atmosphere to etch and clean the sample surface. On the cleaned ZnSe substrate 1, extremely thin Al films 2 are formed and scattered. A Ti film 3 is formed on the entire surface of the ZnSe substrate 1 so that the Al films 2 are covered with the Ti film 3. Thereby an electrode structure which allows ohmic connection can be obtained.