| 摘要 |
PROBLEM TO BE SOLVED: To suppress an overflow carrier being leaked, as a minor carrier, from a first semiconductor layer to a second semiconductor layer over a junction barrier having lower impurity doping concentration in a semiconductor device, where a first semiconductor layer with a prescribed band gap and a second semiconductor layer having a band gap that is the same or larger than the first semiconductor layer are joined with each other. SOLUTION: In a semiconductor light-emitting element having a source layer 1 (active layer) and a leakage layer 2 (clad layer) that has a band gap larger than the source layer 1 and is subjected to heterojunction to the source layer 1, while an overflow carrier is leaked from the source layer 1, leak carrier barrier layers 4 and 6 with a larger band gap than the leakage layer 2 are formed with a prescribed interval near the junction of the leakage layer 2, and at the same time, a carrier overflow block layer 5 is former between them, thus suppressing the overflow carriers. |
