发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To obtain a magnetoresistance effect element, wherein detected current can be effectively made to flow through three layers of a free magnetic layer/a non-magnetic conductive layer/a fixed magnetic layer which exhibit magnetoresistance effect and reproducing characteristics can be enhanced, and its manufacturing method. SOLUTION: A first antiferromagnetic layer 21 is formed utilizing an antiferromagnetic material having a specific resistance value higher than a conductive layer 22 and the conductive layer 22 is formed by being extended to a free magnetic layer 18 from the upper surface of the antiferromagnetic layer 21. Thereby, the shut of detected current from the conductive layer 22 to the first anti-ferromagnetic layer 21 can be suppressed and the detected current can be suitably made to flow through a multi-layered film 18 and output characteristics can be enhanced.
申请公布号 JP2001084530(A) 申请公布日期 2001.03.30
申请号 JP19990261687 申请日期 1999.09.16
申请人 ALPS ELECTRIC CO LTD 发明人 KAKIHARA YOSHIHIKO
分类号 G11B5/31;G11B5/39;H01F10/32;(IPC1-7):G11B5/39 主分类号 G11B5/31
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