| 摘要 |
PROBLEM TO BE SOLVED: To form a diffusion barrier for a mutual connection layer of a semicon ductor device, especially for a mutual connection layer of copper. SOLUTION: Mutual connection of copper includes a transition metal-nitride barrier 106 with a thin metal-silicon-nitride cap 108. The transition metal-nitride barrier 106 is formed on a structure. Thereafter, the barrier 106 is annealed in an environment including Si to form the cap layer 108 abundant in silicon on the surface of the barrier 106. Then, copper 110 is deposited on the cap layer 108 abundant in silicon which has a satisfactory adhesion property.
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