发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory suitable for mixed mounting of logic in which the working frequency can be increased while reducing power consumption. SOLUTION: Pairs of read data line (IOR0-IOR31), write data lines (IOW0- IOW31) and spare read data lines (SIR), spare write data lines (SIW) are arranged across a memory cell array while extending in the column direction. A spare bit is repaired by replacing the pairs of data line. A column redundancy control circuit (CRC) alters the timing for outputting the spare decision results when a transition is made between a data write mode and a data read mode.
申请公布号 JP2001084791(A) 申请公布日期 2001.03.30
申请号 JP19990325381 申请日期 1999.11.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 WATANABE NAOYA;YAMAZAKI AKIRA;ARIMOTO KAZUTAMI;FUJINO TAKESHI;HAYASHI ISAMU;NODA HIDEYUKI
分类号 G11C11/409;G11C11/401;G11C11/407;G11C11/4076;G11C29/00;G11C29/04;H01L21/8242;H01L27/108 主分类号 G11C11/409
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