发明名称 EQUIPMENT AND METHOD FOR PLASMA TREATMENT
摘要 PROBLEM TO BE SOLVED: To prevent the deposition of a reactive product which can adversely affect wafer treatment conditions. SOLUTION: Deposition of a reactive product is related to a temperature of a part to be deposited with the reactive product. It is known that it is hard to have a reactive deposited on a high temperature part. In order to raise the temperature of a part which is expected to be deposited with a reactive product to prevent the deposition of the reactive product, a gas supply plate 1 and an inner tube 3 are integrated into a single unit, and the deposition of the reactive product is prevented using heat transfer from the inner tube.
申请公布号 JP2001085400(A) 申请公布日期 2001.03.30
申请号 JP19990258234 申请日期 1999.09.13
申请人 HITACHI LTD 发明人 AIMOTO AKIHIKO;TAMURA NAOYUKI;MARUYAMA EIJI
分类号 H01L21/302;C23F4/00;H01L21/3065;H05H1/46 主分类号 H01L21/302
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