发明名称 |
EQUIPMENT AND METHOD FOR PLASMA TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To prevent the deposition of a reactive product which can adversely affect wafer treatment conditions. SOLUTION: Deposition of a reactive product is related to a temperature of a part to be deposited with the reactive product. It is known that it is hard to have a reactive deposited on a high temperature part. In order to raise the temperature of a part which is expected to be deposited with a reactive product to prevent the deposition of the reactive product, a gas supply plate 1 and an inner tube 3 are integrated into a single unit, and the deposition of the reactive product is prevented using heat transfer from the inner tube. |
申请公布号 |
JP2001085400(A) |
申请公布日期 |
2001.03.30 |
申请号 |
JP19990258234 |
申请日期 |
1999.09.13 |
申请人 |
HITACHI LTD |
发明人 |
AIMOTO AKIHIKO;TAMURA NAOYUKI;MARUYAMA EIJI |
分类号 |
H01L21/302;C23F4/00;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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